gs9014 vishay semiconductors formerly general semiconductor document number 88197 www.vishay.com 16-may-02 1 new product small signal transistors (npn) features ? npn silicon epitaxial planar transistors complementary to gs9015 ? low noise pre-amplifier high h fe mechanical data case: to-92 plastic package weight: approx. 0.18g packaging codes/options: e6/bulk-5k per container, 20k per box e7/4k per ammo mag., 20k per box maximum ratings & thermal characteristics ratings at 25 c ambient temperature unless otherwise specified parameter symbol value unit collector-base voltage v cbo 50 v collector-emitter voltage v ceo 45 v emitter-base voltage v ebo 5v collector current i c 100 ma power dissipation at t amb = 25 cp tot 450 (1) mw thermal resistance junction to ambient air r ja 250 (1) c/w junction temperature t j 150 c storage temperature range t s 55 to +150 c note: (1) valid provided that leads are kept at ambient temperature at a distance of 2mm from case 0.181 (4.6) min. 0.492 (12.5) 0.181 (4.6) 0.142 (3.6) 0.098 (2.5) max. ? 0.022 (0.55) bottom view dimensions in inches and (millimeters) to-226aa (to-92)
gs9014 vishay semiconductors formerly general semiconductor www.vishay.com document number 88197 2 16-may-02 electrical characteristics (t j = 25 c unless otherwise noted) parameter symbol test condition min typ max unit current gain group a 60 150 dc current gain b h fe v ce = 5v, i c = 1ma 100 300 c 200 600 d 400 1000 collector-emitter breakdown voltage v (br)ceo i c = 1ma, i b = 0 45 v collector-base breakdown voltage v (br)cbo i c = 100a, i e = 0 50 v emitter-base breakdown voltage v (br)ebo i e = 100a, i c = 0 5 v collector cut-off current i cbo v cb = 50v, i e = 0 50 na emitter cut-off current i ebo v eb = 5v, i c = 0 50 na collector-emitter saturation voltage v ce(sat) i c = 100ma, i b = 5ma 0.14 0.3 v base-emitter saturation voltage v be(sat) i c = 100ma, i b = 5ma 0.84 1.0 v base-emitter on voltage v be(on) v ce = 5v, i c = 2ma 0.58 0.63 0.70 v output capacitance c ob v cb = 10v, i e = 0, 2.2 3.5 pf = 1 mhz gain-bandwidth product t v ce = 5v, i c = 10ma 150 270 mhz noise figure nf v ce = 5v, i c = 0.2ma, 0.9 10 db = 1khz, rs = 2k ?
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